Abstract:The traps induced degradation of the Al 2 O 3 and LaAlO 3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al 2 O 3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al 2 O 3 , oxygen vacancies and interstitial Aluminum ions in LaAlO 3 have important roles in PBTI. Simulated results indicate that Al 2 O 3 have better PBTI and recovery than that of LaAlO 3 .

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

(Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress

Reliability of inversion channel InGaAs n-MOSFETs

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Insight into PBTI in InGaAs nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks

Characterization Of Border Traps In Iii-V Mosfets Using An Rf Transconductance Method

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects