Abstract:Interface trapping is one of the most notorious effects that limit device performance in GaN-based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a comprehensive study on interface traps in AlGaN/GaN MISHEMTs using low pressure chemical vapor deposition SiNx as gate dielectric. We combined the trapping analysis in MIS diodes and actual MISHEMTs to estimate the interface trap state densities (D-it) and their distributions in the device, and to investigate their influence on device electrical properties. Two types of interface traps with different emission time constants, designated as "slow" and "fast" traps, were identified and characterized by means of pulse-mode current-voltage measurements and a frequency dependent conductance method. It was found that "fast" traps located in the device access region could be effectively restrained by passivation using plasma enhanced chemical vapor deposition SiNx. However, "slow" traps, no matter whether located beneath the metal gate or in the access region, were less influenced by passivation. Due to the strong interference of traps in the access region, Dit extraction using the conventional conductance method was not accurate for the lateral GaN-based MIS diodes. A modified small-signal equivalent circuit that includes the impedance of traps in the access region is proposed. Proper passivation for the device access region is essential when using the conductance method for GaN-based MIS devices.

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A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

An Investigation on Border Traps in III–V MOSFETs With an In 0.53 Ga 0.47 As Channel

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Evaluation of the Border Traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS Structure with Long Time Constant Using Quasi-Static Capacitance Voltage Method

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Characterization Of Border Traps In Iii-V Mosfets Using An Rf Transconductance Method

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs