Abstract:Ultrathin gate and tunnel oxides in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and eventually causes dielectric breakdown. Oxide reliability, therefore, is a key concern in technology scaling for ultra-large scale integration (ULSI). Here we provide critical new insight into oxide degradation (and consequently, reliability) by a systematic study of five technologically relevant parameters, namely, stress-current density, oxide thickness, stress temperature, charge-injection polarity (gate versus substrate), and nitridation of pure oxide. For all five parameters, a strong correlation has been observed between oxide degradation and the generation of new traps (distinct from the filling of intrinsic traps). Further, we observe that this correlation is independent of the trap polarity (positive versus negative). Based on this correlation, and based on the fundamental link between electronic properties and atomic structure, a physical-damage model of dielectric breakdown has been proposed. The concept of the physical-damage model is that the oxide suffers dielectric breakdown when physical damage due to broken bonds forms a defect-filled filamentary path in the oxide, that conducts excessive current. A good monitor of this physical damage is trap generation, which we believe is caused by physical bond breaking in the oxide and at the interface. The model has been quantified empirically by the correlation between trap generation and Q/sub bd/.<>

Boundary Condition and Initial Value Effects in the Reaction Diffusion Model of Interface Trap Generation/Recovery

Effective Neumann Boundary Condition for Boundary Layer at Ohmic Contact

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Dynamic Oxide Current Relaxation Spectroscopy for Thin Insulator Mos Structure under Fowler-Nordheim Stresses

A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

Correlation Between Border Traps and Exposed Surface Properties in Gate Recessed Normally-off Al2O3/GaN MOSFET

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Correlation of trap generation to charge-to-breakdown (Q/sub bd/): a physical-damage model of dielectric breakdown

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Oxide Trap Relaxation Spectroscopy: A New Difference Method to Determine Trap in Oxidized Silicon

Investigation on random charging/discharging of single oxide trap in SiO2: An ab -initio study