Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode

Qing-Qing Sun,Laha, A.,Osten, H.Jorg,Ding, Shi-Jin
DOI: https://doi.org/10.1109/icsict.2008.4734784
2008-01-01
Abstract:Capacitor composed of single crystalline Gd2O3 on Si(100) with Pt top electrode was fabricated by molecular beam epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd2O3 is pinned at 4.75 eV and due to the lattice mismatch between Gd2O3, the interface state density is in the level of 1013 extracted by Terman and conductance methods.
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