Abstract:The impact of shallow trench isolation (STI) on non-volatile memories has become much more serious for sub-90-nm CMOS technologies. This paper uses the localized charge trapping polysilicon-oxide-nitride-oxide-silicon (SONOS) flash memory cells to investigate STI edge effect on programming disturb when the channel hot electron injection programming method is applied. The different programming disturbs between the central cells far from STI and the edge cells close to STI are experimentally presented on the array level. At the programmed state, the edge cells suffer larger decrease of threshold voltage compared to the central cells under the same drain disturb. However, both edge and central cells at the erased state have not any significant variations of threshold voltage distribution under the same disturb conditions. In addition, both edge and central cells demonstrate almost the same behaviors under gate disturb. Two-dimension process simulation results show that the edge cells suffer a higher compressive stress caused from STI corner than the central cells. The higher compressive stress increases hole mobility, which is mainly responsible for the relatively serious drain disturb in the programmed edge cells.

The Impact of Shallow Trench Isolation on the Channel Hot Electron Programming Behaviors of SONOS Cells

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Reducing the Influence of Sti on Sonos Memory Through Optimizing Added Boron Implantation Technology

Analysis of Influence of STI-induced Stress on 90 Nm SONOS Memory

Improved Programming Efficiency Through Additional Boron Implantation at the Active Area Edge in 90 Nm Localized Charge-Trapping Non-volatile Memory

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Impact of Sti on Statistical Variability and Reliability of Decananometer Mosfets

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Distribution and Impact of Local Trapped Charges in SONOS Memory

Investigation and Process Optimization of Sonos Cell'S Drain Disturb in 2-Transistor Structure Flash Arrays

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Impact of Intrinsic Parameter Fluctuations in Decanano MOSFETs on Yield and Functionality of SRAM Cells

Study on stress in trench structures during silicon IGBTs process-oxidation

Improvement of Cell’s Performance for Low Power Self-Aligned Split-Gate SONOS Memory Device

Device Scaling Considerations for Sub-90-nm 2-Bit/cell Split-Gate Flash Memory Cell

The Impact of Random Doping Effects on CMOS SRAM Cell

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models