Abstract:Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation energy. The threshold switching mechanism is then explained by the nonequilibrium population in high-mobility shallow traps at high electric field and by the nonuniform field distribution along the amorphous layer thickness. A single analytical model is then shown which is able to account for subthreshold conduction, threshold switching, negative differential resistance region, and ON regime. The model can be applied for fast yet physically based computation of the current in chalcogenide-based devices (e.g., phase change memory cells and arrays) as a function of applied voltage, temperature, and programmed state.

A Field-Induced Threshold Switching Model of Phase-Change Memory

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Transition from Junction Limited to Bulk Limited Subthreshold Conduction in Phase Change Memory

A compact model for phase change memory based on carrier transport mechanism

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

A physics/circuit-based switching model for carbon-based resistive memory with sp 2/sp 3 cluster conversion

A Compact Phase Change Memory Model With Dynamic State Variables

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Threshold Switching Uniformity In In2se3 Nanowire-Based Phase Change Memory

Threshold switching uniformity in In 2 Se 3 nanowire-based phase change memory

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Study on nucleation characteristic of phase change memory set operation using numerical simulation

A SPICE Model of Phase Change Memory for Neuromorphic Circuits