Abstract:Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation energy. The threshold switching mechanism is then explained by the nonequilibrium population in high-mobility shallow traps at high electric field and by the nonuniform field distribution along the amorphous layer thickness. A single analytical model is then shown which is able to account for subthreshold conduction, threshold switching, negative differential resistance region, and ON regime. The model can be applied for fast yet physically based computation of the current in chalcogenide-based devices (e.g., phase change memory cells and arrays) as a function of applied voltage, temperature, and programmed state.

Transition from Junction Limited to Bulk Limited Subthreshold Conduction in Phase Change Memory

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

A Field-Induced Threshold Switching Model of Phase-Change Memory

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

Internal reverse-biased p-n junctions: a possible origin of the high resistance in phase change superlattice

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Investigation on non-rotating and non-volatile phase change memory

A Three-Dimensional Numerical Simulator of Phase-Change Memory by Random Nucleation and Growth Approach

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Atomistic simulation of phase change memory during switching

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect

Constraints and Resolution for Phase Change Materials and Memory Device Scaling

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Interface Engineering to Enhance Phase Change Memory Programmability

Study on nucleation characteristic of phase change memory set operation using numerical simulation