Abstract:This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future potential. Retention errors, caused by charge leakage over time, are the dominant source of flash memory errors. Understanding, characterizing, and reducing retention errors can significantly improve NAND flash memory reliability and endurance. In this work, we first characterize, with real 2Y-nm MLC NAND flash chips, how the threshold voltage distribution of flash memory changes with different retention ages -- the length of time since a flash cell was programmed. We observe from our characterization results that 1) the optimal read reference voltage of a flash cell, using which the data can be read with the lowest raw bit error rate (RBER), systematically changes with its retention age, and 2) different regions of flash memory can have different retention ages, and hence different optimal read reference voltages. Based on our findings, we propose two new techniques. First, Retention Optimized Reading (ROR) adaptively learns and applies the optimal read reference voltage for each flash memory block online. The key idea of ROR is to periodically learn a tight upper bound of the optimal read reference voltage, and from there approach the optimal read reference voltage. Our evaluations show that ROR can extend flash memory lifetime by 64% and reduce average error correction latency by 10.1%. Second, Retention Failure Recovery (RFR) recovers data with uncorrectable errors offline by identifying and probabilistically correcting flash cells with retention errors. Our evaluation shows that RFR essentially doubles the error correction capability.

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Modeling of program Vth distribution for 3-D TLC NAND flash memory

Gradual Channel Estimation Method for TLC NAND Flash Memory

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

The Method of Predicting Retention Threshold Voltage Distribution for NAND Flash Memory Based on Back-Propagation Neural Network

Study Of Intercell Trapped Charge For Data Retention Improvement In 3d Nand Flash Memory

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

Research on 3D TLC NAND Flash Reliability from the Perspective of Threshold Voltage Distribution

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement

Study of a Phenomenon of High Error WL in Mixed Read and Program Operations in 3-D NAND Flash

Experimental Characterization, Optimization, and Recovery of Data Retention Errors in MLC NAND Flash Memory

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Data Pre-Emphasis Based Retention Reliability Enhance Scheme For Mlc Nand Flash Memories

A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory

The Influence Of Nand Flash Self-Recovery Effect On Retention Error

LSB Page Refresh Based Retention Error Recovery Scheme for MLC NAND Flash

Assessment Methodology of the Lateral Migration Component in Data Retention of 3D SONOS Memories

Latency Variation Aware Read Performance Optimization on 3D High Density NAND Flash Memory.