Abstract:Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications. In this work, a molecular wire made of seamless junctions between semiconducting single‐walled carbon nanotubes (SWNT) and partially unzipped segments of the SWNTs are reported. This novel nanostructure is demonstrated to be a nonvolatile memory, which works at room temperature under atmospheric conditions. The characteristics of the device are measured with a four‐terminal configuration and a non‐local voltage (Vnon‐local) is used as the storage signal. An electrical hysteresis of Vnon‐local is observed, wherein two states with different Vnon‐local can be switched by the application of an electric field through an insulating gate device structure, exhibiting nonvolatile characteristics. Vnon‐local can be modulated with external magnetic fields and the mechanism of the electrical hysteresis is attributed to the magnetic moments at the partially unzipped SWNT. The smaller size of SWNT and high working temperature may lead to the development of molecular nanomagnets as nonvolatile memory devices for practical applications. A kind of nonvolatile molecular memory based on a seamless junction between a single‐walled carbon nanotube (SWNT) and partially unzipped segments of SWNTs is demonstrated, which works at room temperature under atmospheric conditions. Three key requirements (“write”, “store”, and “read”) and their properties (the endurance, data access time, and write power) are studied and its working mechanisms are discussed.

Programming/Erasing Characteristics of Hysteresis-Based Nonvolatile Memory Devices of Single-Wall Carbon Nanotubes

Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes

Nonvolatile Memory from Single-Walled Carbon Nanotube-Based Field Effect Transistors

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Two-bit Memory Devices Based on Single-Wall Carbon Nanotubes: Demonstration and Mechanism

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Performance Enhancement and Mechanism Exploration of All-Carbon-nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide

Ferroelectric-carbon Nanotube Memory Devices.

Hysteresis in In2O3:Zn Nanowire Field-Effect Transistor and Its Application As a Nonvolatile Memory Device

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Demonstration of Nonvolatile Multilevel Memory in Ambipolar Carbon Nanotube Thin-Film Transistors

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating

Room‐Temperature Nonvolatile Molecular Memory Based on Partially Unzipped Nanotube

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Cnt Based Mechanical Devices for Ulsi Memory

Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

Carbon Nanotube Transistor with Short-Term Memory

Photo-assisted Hysteresis of Electronic Transport for ZnO Nanowire Transistors.

Modeling of High-k Gate Stack of Tunnel Barrier in Nonvolatile Memory MOS Structures

Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory