Abstract:Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications. In this work, a molecular wire made of seamless junctions between semiconducting single‐walled carbon nanotubes (SWNT) and partially unzipped segments of the SWNTs are reported. This novel nanostructure is demonstrated to be a nonvolatile memory, which works at room temperature under atmospheric conditions. The characteristics of the device are measured with a four‐terminal configuration and a non‐local voltage (Vnon‐local) is used as the storage signal. An electrical hysteresis of Vnon‐local is observed, wherein two states with different Vnon‐local can be switched by the application of an electric field through an insulating gate device structure, exhibiting nonvolatile characteristics. Vnon‐local can be modulated with external magnetic fields and the mechanism of the electrical hysteresis is attributed to the magnetic moments at the partially unzipped SWNT. The smaller size of SWNT and high working temperature may lead to the development of molecular nanomagnets as nonvolatile memory devices for practical applications. A kind of nonvolatile molecular memory based on a seamless junction between a single‐walled carbon nanotube (SWNT) and partially unzipped segments of SWNTs is demonstrated, which works at room temperature under atmospheric conditions. Three key requirements (“write”, “store”, and “read”) and their properties (the endurance, data access time, and write power) are studied and its working mechanisms are discussed.

Two-bit Memory Devices Based on Single-Wall Carbon Nanotubes: Demonstration and Mechanism

Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes

Programming/Erasing Characteristics of Hysteresis-Based Nonvolatile Memory Devices of Single-Wall Carbon Nanotubes

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Ferroelectric-carbon Nanotube Memory Devices.

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Room‐Temperature Nonvolatile Molecular Memory Based on Partially Unzipped Nanotube

Cnt Based Mechanical Devices for Ulsi Memory

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

Nonvolatile Memory from Single-Walled Carbon Nanotube-Based Field Effect Transistors

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

A Flexible Carbon Nanotube Sen‐Memory Device

Novel Memory Devices Based on Nanostructured Carbon Materials

Bi-layer Resistive Switching Memory Using Aligned SWCNTs As Electrodes

Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Demonstration of Nonvolatile Multilevel Memory in Ambipolar Carbon Nanotube Thin-Film Transistors

Carbon Nanotube Transistor with Short-Term Memory

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating