Abstract:The rectification and photoelectric properties of PN junctions depend considerably on the depletion zone, which is usually difficult to modulate in situ without bias voltage. However, lead zirconate titanate (PZT) ceramics with a self-polarization field can induce nonvolatile modulation effects on the transport characteristics of heterostructures. In this study, PEDOT:PSS/PbZr0.2Ti0.8O3/Nb:SrTiO3 (PEDOT/PZT/NSTO) P-I-N heterostructures are prepared, and their electrical and photoelectric characteristics are modulated in situ by varying the polarization voltage (VP). Specifically, in a sample with 2-nm PZT thickness, the rectification ratios (RR) exhibit a cyclic variation from 0.55 to 654 between +3 and -6 V VP, which indicates a controllable reversion of the rectification direction in this device, and the coefficient of rectification ratio (CRR) is 1189. After writing the -6 V VP, the open-circuit voltage (VOC) shows reversible characteristics when turning the light on (VOC = +0.20 V) and off (VOC = -0.15 V). In addition, the modulation behaviours of P-I-N heterostructures with various PZT layer thicknesses (2-16 nm) are investigated, and the CRR shows a maximum peak value of -2 x 106 when the PZT thickness is 8 nm. This study provides a promising approach for developing nonvolatile modulation in self-driven photoelectric devices.

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating

Nanowire Transistors with Ferroelectric Gate Dielectrics: Enhanced Performance and Memory Effects

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

Ferroelectric-carbon Nanotube Memory Devices.

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

Electrical Hysteresis of Single-Walled Carbon Nanotube Field Effect Transistors and Its Modulation by an External Magnetic Field

Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

Ferroelectric Modulated Rectification and Photoelectric Properties of PEDOT/PZT/NSTO P–I–N Heterojunctions

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

Single-layer graphene field-effect transistors with ferroelectric PZT gate

Electrical Properties of a PZT Ferroelectric Field Effect Transistor

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Ferroelectric gated electrical transport in CdS nanotetrapods.

Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes

Programming/Erasing Characteristics of Hysteresis-Based Nonvolatile Memory Devices of Single-Wall Carbon Nanotubes

Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor

Nonvolatile Ferroelectric Field Effect Transistor Based on a Vanadium Dioxide Nanowire with Large On- and Off-Field Resistance Switching