Abstract:Field effect transistors (FETs) using two-dimensional molybdenum disulfide (MoS2) as the channel material has been considered one of the most potential candidates for future complementary metal-oxide-semiconductor technology with low power consumption. However, the understanding of the correlation between the device performance and material properties, particularly for devices with scaling-down channel lengths, is still insufficient. We report in this paper back-gate FETs with chemical-vapor-deposition grown and transferred MoS2 and Zr doped HfO2 ((Hf,Zr)O2, HZO) high-k dielectric gates with channel lengths ranging from 10 to 30 µm with a step of 5 µm. It has been demonstrated that channels with the length to width ratio of 0.2 lead to the most superior performance of the FETs. The MoS2/HZO hybrid FETs show a stable threshold voltage of ∼1.5 V, current on/off ratio of >104, and field effect mobility in excess of 0.38 cm2 V−1 s−1. The impact of the channel lengths on FET performance is analyzed and discussed in depth. A hysteresis loop has been observed in the Ids − Vgs characteristics of the hybrid FETs, which has been further studied and attributed to the charge effect at the interfaces. The HZO films show a relatively weak ferroelectric orthorhombic phase and thus serve mainly as the high-k dielectric gate. Charge trapping in the HZO layer that might induce hysteresis has been discussed. Our results show that MoS2/HZO hybrid FETs possess great potential in future low power and high-speed integrated circuits, and future work will focus on further improvement of the transistor performances using ferroelectric HZO films and the study of devices with even shorter MoS2 channels.

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating

Temperature-dependent Electrical Transport Properties in Graphene/pb(zr0.4ti0.6)o3 Field Effect Transistors

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Tunable Hysteresis Behaviors In Perovskite Transistors

Magnetic Field‐Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

Investigation on the Phase-Transition-induced Hysteresis in the Thermal Transport along the C-Axis of MoTe2

Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

Impact of the Channel Length on Molybdenum Disulfide Field Effect Transistors with Hafnia-Based High-K Dielectric Gate