Santu Prasad Jana,Suraina Gupta,Anjan K. Gupta
Abstract:Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using the dynamics of interface traps' occupancy. The reduction in hysteresis is found to be steepest at a blocking temperature near 225 K. This is attributed to the interplay between thermal and barrier energies and fitted using a distribution of the latter. Further, the charge stored in the blocked traps is programmed at low temperatures by cooling under suitable gate voltage. Thus the threshold gate-voltage in nearly non-hysteretic devices at 80 K temperature is reversibly controlled over a wide range.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in MoS₂ - on - SiO₂ - based field - effect transistors (FETs), the influence of interface traps on conductivity and hysteresis and their temperature dependence. Specifically, the author has studied the following problems:
1. **Influence of interface traps on conductivity and hysteresis**:
- Through gate - voltage scanning, it was observed that when cooled, the hysteresis of conductivity decreased significantly.
- Research shows that this reduction in hysteresis is related to the occupation kinetics of interface traps.
2. **Temperature dependence**:
- It was found that near the blocking temperature of about 225 K, the reduction in hysteresis was the most significant.
- This phenomenon is attributed to the interaction between thermal energy and barrier energy, and these barrier energies are fitted using distribution.
3. **Low - temperature programming**:
- At low temperatures, the charge stored in the blocking traps can be programmed by cooling with an appropriate gate voltage.
- Therefore, at a temperature of 80 K, the threshold gate voltage of an almost non - hysteretic device can be reversibly controlled within a wide range.
### Specific problem description
- **Background**:
Single - layer or multi - layer transition metal sulfides (such as MoS₂) have attracted much attention due to their potential for applications such as high - frequency capabilities, logic - gate circuits, and optoelectronic devices. However, one of the main challenges these materials face in practical applications is non - ideal behavior and degradation problems caused by interface traps. Interface traps can lead to a decrease in mobility, an increase in response time, and an increase in noise and hysteresis in transfer characteristics.
- **Objective**:
This paper aims to more comprehensively understand the behavior of interface traps, especially how they affect the conductivity and hysteresis of MoS₂ - on - SiO₂ FETs, and explore their temperature dependence.
### Model and experimental methods
- **Model**:
The author explains the changes in conductivity and hysteresis by modeling the occupation kinetics of interface traps. They introduce a simplified model, analogous to the blocking phenomenon in superparamagnetic systems, to explain the temperature - dependent hysteresis.
- **Experimental**:
The experimental part details how to transfer multi - layer MoS₂ onto a SiO₂ substrate and fabricate gold source - drain contacts. Through low - temperature measurements, the conductivity and hysteresis at different temperatures were studied.
### Main findings
- **Temperature dependence**:
At a temperature of about 225 K, the reduction in hysteresis is the most significant, which is attributed to the interaction between thermal energy and barrier energy.
- **Low - temperature programming**:
At a temperature of 80 K, the charge stored in the blocking traps can be programmed by cooling with an appropriate gate voltage, thereby achieving reversible control of the threshold voltage.
In summary, through experiments and theoretical modeling, this paper reveals the complex behavior of interface traps in MoS₂ - on - SiO₂ FETs and provides important insights for understanding and optimizing these devices.