Abstract:Junctionless transistor (JLT) which does not have a PN junction in the source-channel-drain path, is reported to have a lower OFF-state current and therefore is more scalable to lower channel lengths compared to a conventional MOSFET, moreover a JLT also offers easy fabrication steps. Tunnel FET (TFET) provides a theoretically possible limit of subthreshold swing (SS) and has applicability for low-power electronics. Combining junctionless technology in a TFET (JL-TFET), the possible application of the device is looked into, for further low-power and high-temperature applications. This work analyses the performances of a JL-TFET for high-temperature applications and the same is compared with a conventional p-i-n silicon-on-insulator tunnel field effect transistor (p-i-n SOI-TFET). Using calibrated technology computer-aided design (TCAD) simulations, analog circuit performance parameters like ON-state to OFF-state current ratio ( ), subthreshold slope (SS), transconductance ( ), gate-to-source capacitance ( ), gate-to-drain capacitance ( ), and cut-off frequency ( ) etc. are analyzed for temperatures till 500 K. ON-state current of JL-TFET increases in the order of hundreds of at high temperatures, whereas p-i-n SOI-TFET shows lesser temperature sensitivity. JL-FET is more applicable to low-power applications, whereas a p-i-n SOI-TFET has more suitability for high-speed applications. Dual material technology adoption helps in improving the ambipolar behavior of the device. Analysis of interface traps is carried out in this architecture where the concentration, energy positions, and energy width of the distribution of acceptor-like and donor-like traps at the interface of semiconductor and oxide are also evaluated.

Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs

Blocking transition of SrTiO$_3$ surface dipoles in MoS$_2$/SrTiO$_3$ field effect transistors with counterclockwise hysteresis

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$

Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Impact of High-temperature and Interface Traps on Performance of a Junctionless Tunnel FET

Hysteresis-free MoS2 Metal Semiconductor Field-Effect Transistors with Van Der Waals Schottky Junction

Continuous Low‐Bias Switching of Superconductivity in a MoS2 Transistor

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Field-effect Modulation of Conductance in VO2 Nanobeam Transistors with HfO2 As the Gate Dielectric

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Molecular Switching Operation in Gate Constricted Interface of MoS$_2$ and hBN Heterostructure

Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction