Abstract:Multi-terminal memtransistors using polycrystalline monolayer molybdenum disulfide (MoS2) have recently emerged as novel synaptic devices. Due to the coexistence of disorder and strong Coulomb carrier-carrier interactions in MoS2, localization and delocalization of carriers can come into play successively upon the relative strength of disorder and interactions, which can be tuned by the Fermi level (<math> E F</math>). In this work, we show that the transition from trap-mediated to band-like transport leads to the resistive switching behavior in MoS2 memtransistors, which is driven by the <math> E F</math> shift arising from defect profile redistribution that is facilitated by grain boundaries. In the high resistance state, field-driven hopping conduction can be clearly observed in the high-field region (<math> E > 0.05</math> MV/cm), whereas the linear dependence of <math> l n ( I / E )</math> on the square root of the electric field, <math> E 1 / 2</math>, suggests Poole–Frenkel emission in the low-field region (<math> E ≤ 0.05</math> MV/cm). In the low resistance state, strong interactions prevailed and a substantial amount of thermally activated electrons are excited into the conduction band, leading to band-like transport.

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$

Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Blocking transition of SrTiO$_3$ surface dipoles in MoS$_2$/SrTiO$_3$ field effect transistors with counterclockwise hysteresis

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on Sio2 Substrates Using Raman Spectroscopy

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Hysteresis-free MoS2 Metal Semiconductor Field-Effect Transistors with Van Der Waals Schottky Junction

Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Hysteresis of Electronic Transport in Graphene Transistors

Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors