Abstract:Randomly distributed traps at the MoS$_2$/SiO$_2$ interface result in non-ideal transport behavior, including hysteresis in MoS$_2$/SiO$_2$ field effect transistors (FETs). Thus traps are mostly detrimental to the FET performance but they also offer some application potential. Our STM/S measurements on atomically resolved few-layer and single-layer MoS$_2$ on SiO$_2$ show n-doped behavior with the expected band gap close to 2.0 and 1.4 eV, respectively. The local tunnel conductance with gate-voltage $V_{\rm g}$ sweep exhibits a turn-on/off at a threshold $V_{\rm g}$ at which the tip's Fermi-energy nearly coincides with the local conduction band minimum. This threshold value is found to depend on $V_{\rm g}$ sweep direction amounting to local hysteresis. The hysteresis is, expectedly, found to depend on both the extent and rate of $V_{\rm g}$-sweep. Further, the spatial variation in the local $V_{\rm g}$ threshold and the details of tunnel conductance Vs $V_{\rm g}$ behavior indicate inhomogenieties in both the traps' density and their energy distribution. The latter even leads to the pinning of the local Fermi energy in some regions. Further, some rare locations exhibit a p-doping with both p and n-type $V_{\rm g}$-thresholds in local conductance and an unusual hysteresis.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to study the gate - voltage - related non - uniform hysteresis in the local STM tunneling conductance of monolayer MoS₂ on a SiO₂ substrate caused by interface traps. Specifically, the authors explored the following issues through scanning tunneling microscopy (STM) measurements: 1. **The influence of interface traps**: Traps randomly distributed at the MoS₂/SiO₂ interface lead to non - ideal transport behaviors, including the hysteresis in MoS₂/SiO₂ field - effect transistors (FETs). These traps have a negative impact on FET performance, but also provide some potential application values at the same time. 2. **The hysteresis characteristics of local tunneling conductance**: Through STM/S measurements, the authors observed the n - type doping behavior of monolayer and few - layer MoS₂ at atomic resolution, and found that the local tunneling conductance shows on/off threshold changes depending on the scanning direction of the gate voltage (Vg), that is, local hysteresis. 3. **The dependence of hysteresis characteristics**: The dependence of the hysteresis on the Vg scanning range, scanning rate, and spatial position was studied. The results show that the hysteresis not only depends on the scanning range and rate, but also has spatial non - uniformity, which reflects the non - uniformity of trap density and energy distribution. 4. **Fermi - level pinning**: The local Fermi - level in some regions is pinned due to the presence of traps, resulting in the carrier density remaining unchanged over a large range. 5. **Rare p - type doping regions**: At some rare locations, p - type doping behavior was found, and its local conductance shows an unusual hysteresis. ### Formula summary - **Trap density estimation formula**: \[ N_{\text{tr}}=\frac{(V_{\text{thb}} - V_{\text{thf}})C_{\text{ox}}}{e} \] where: - $V_{\text{thb}}$ is the threshold voltage during reverse scanning, - $V_{\text{thf}}$ is the threshold voltage during forward scanning, - $C_{\text{ox}}$ is the oxide capacitance ($C_{\text{ox}}=\frac{\kappa\epsilon_0}{d}$), - $e$ is the electron charge. - **Oxide capacitance formula**: \[ C_{\text{ox}}=\frac{\kappa\epsilon_0}{d} \] where: - $\kappa$ is the dielectric constant, - $\epsilon_0$ is the vacuum dielectric constant, - $d$ is the oxide thickness. Through these studies, the authors revealed the complex hysteresis phenomenon and its microscopic mechanism of monolayer MoS₂ on a SiO₂ substrate caused by interface traps, providing important theoretical basis and experimental reference for the future design of high - performance MoS₂ - based devices.

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