Abstract:We have explored an approach for the fabrication of intrinsic and hysteresis-free graphene field-effect transistors (FETs) and for the construction of graphene p-n junctions based on substrate engineering by hexagonal boron nitride (h-BN)/SiO2. The effect of various interfaces on the performance of the graphene FETs was systematically studied by constructing four types of graphene devices (graphene/SiO2 FETs, graphene/h-BN FETs, h-BN/graphene/SiO2 FETs, and h-BN/graphene/h-BN FETs). Graphene/SiO2 FETs and h-BN/graphene/SiO2 FETs always exhibit large hysteresis before and after annealing, whereas graphene/h-BN FETs and h-BN/graphene/h-BN FETs show intrinsic properties after annealing. Raman measurements also indicate that graphene on a SiO2 substrate contains large amounts of p-doping, whereas that on a h-BN substrate is intrinsic. Thus, the graphene/h-BN interface gives intrinsic and hysteresis-free graphene FETs, whilst the graphene/SiO2 interface affords p-doping and a hysteresis effect in the graphene FETs. This result is because h-BN serves as an insulation layer, which prevents charge trapping between the graphene and the charge traps at the graphene/SiO2 interface, which cause the hysteresis. In addition, the negligible electrostatic doping of h-BN into graphene also ensures the intrinsic and hysteresis-free properties of graphene/BN/SiO2 FETs. Moreover, benefitting from the p-doped and intrinsic features of graphene on SiO2 and h-BN substrates, respectively, large-scale graphene p-n junction superlattices with great potential difference are constructed and integrated into photodetector arrays by substrate engineering with h-BN/SiO2. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions.

Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on Sio2 Substrates Using Raman Spectroscopy

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Hysteresis Reversion in Graphene Field-Effect Transistors

Hysteresis of Electronic Transport in Graphene Transistors

Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Stability Analysis of A Back-Gate Graphene Transistor in Air Environment

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Analysis of Current Hysteresis in Graphene Field Effect Transistor

Understanding Surfactant/Graphene Interactions Using A Graphene Field Effect Transistor: Relating Molecular Structure to Hysteresis and Carrier Mobility

Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

Hysteresis Analysis of Graphene Transistor under Repeated Test and Gate Voltage Stress

HfO2 Dielectric Thickness Dependence of Electrical Properties in Graphene Field Effect Transistors with Double Conductance Minima

Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Fabrication and Characterization of Graphene Derived from SiC

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$