Abstract:Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moiré effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Stability Analysis of A Back-Gate Graphene Transistor in Air Environment

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Hysteresis of Electronic Transport in Graphene Transistors

Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on Sio2 Substrates Using Raman Spectroscopy

Hysteresis Analysis of Graphene Transistor under Repeated Test and Gate Voltage Stress

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Temperature-dependent Electrical Transport Properties in Graphene/pb(zr0.4ti0.6)o3 Field Effect Transistors

Hysteresis Reversion in Graphene Field-Effect Transistors

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

Understanding Surfactant/Graphene Interactions Using A Graphene Field Effect Transistor: Relating Molecular Structure to Hysteresis and Carrier Mobility

Unipolar to Ambipolar Conversion in Graphene Field-Effect Transistors

Nitrogen Plasma-Treated Multilayer Graphene-Based Field Effect Transistor Fabrication and Electronic Characteristics

Analysis of Current Hysteresis in Graphene Field Effect Transistor

Study of graphene field-effect transistors under electrostatic discharge stresses

Atmospheric doping effects in epitaxial graphene: correlation of local and global electrical measurements

Detangling Extrinsic and Intrinsic Hysteresis for Detecting Dynamic Switch of Electric Dipoles using Graphene Field-Effect Transistors on Ferroelectric Gates

Poly (ethylene Imine)-Modulated Transport Behaviors of Graphene Field Effect Transistors with Double Dirac Points

Graphene Transistor Transfer Properties Phenomenon Research Dependence on Gate Voltage

Graphene Field Effect Transistors with Ferroelectric Gating

Carrier Sheet Density Constrained Anomalous Current Saturation of Graphene Field Effect Transistors: Kinks and Negative Differential Resistances.