Electrical stress reliability of graphene field effect transistor under different bias voltages
Song-Wen Wang,Hong-Xia Guo,Teng Ma,Zhi-Feng Lei,Wu-Ying Ma,Xiang-Li Zhong,Hong Zhang,Xiao-Jie Lu,Ji-Fang Li,Jun-Lin Fang,Tian-Xiang Zeng,School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China,State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, China Electronic Product Reliability and Environmental Research Institute, Guangzhou 511300, China,Northwest Institute of Nuclear Technology, Xi'an 710024, China
DOI: https://doi.org/10.7498/aps.73.20241365
IF: 0.906
2024-12-06
Acta Physica Sinica
Abstract:In this paper, graphene field effect transistors (GFETs) with the top-gate structure are taken as the research object. The electrical stress reliabilities are studied under different bias voltage conditions. The electrical pressure conditions are gate electrical stress (VG = –10 V, VD = 0 V, and VS = 0 V), drain electric stress (VD = –10 V, VG = 0 V, and VS = 0 V), and electrical stresses applied simultaneously by gate voltage and drain voltage (VG = –10 V, VD = –10 V, VS = 0 V). Using a semiconductor parameter analyzer, the transfer characteristic curves of GFETs before and after electrical stress are obtained. At the same time, the carrier migration and the Dirac voltage VDirac degradation are extracted from the transfer characteristic curves. The test results show that under different electrical pressures, the carrier mobility of GFETs degrades continuously with the increase of electric stress time. Different electrical pressure conditions have varying effects on the drift direction and degradation of VDirac: gate electrical stress and drain electrical stress cause VDirac drift of the device in opposite directions, and the gate electrical stress is greater than the electrical stress applied by both gate voltage and drain voltage, leading to VDirac degradation of GFETs. An analysis of the causes indicates that different electrical stresses produce different electric field directions in the device, which can affect the carrier concentration and movement direction. Electrons and holes in the channel are induced and tunnel into the oxide layer, and they are captured by trap charges in the oxide layer and at the interface between graphene and oxide, forming oxide trap charges and interface trap charges. This is the main reason for reducing carrier mobility of GFET. Different electric field directions under different electric stresses produce positively charged trap charges and negatively charged trap charges. The difference in the type of trap charge banding is the main reason for the different directions of VDirac drift in GFETs. When both trap charges coexist, they have a canceling effect on the VDirac drift of the GFETs. Finally, by combining TCAD simulation the simulation model of the influence of electrical stress induced trap charge on the VDirac generation of GFET is further revealed. The result demonstrates that the differences in the type of trap charge banding have different degradation effects on the VDirac of GFETs. The related research provides data and theoretical support for putting graphene devices into practical application. Acta Physica Sinica. 2024 73(23): 238501. Published 2024-12-05
physics, multidisciplinary