Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Research on Electrostatic Discharge Characteristics of Tunnel Field Effect Transistors

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A novel gate-suppression technique for ESD protection.

Tunnel Field-Effect Transistor Triggered Silicon-Controlled Rectifier

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Study of graphene field-effect transistors under electrostatic discharge stresses

Electrostatic discharge current analyzed by transmission line theory

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Study on Electrostatic Discharge Stress Reliability of Thin-Film Transistors With Various Interface and Structure Types

Novel Electrostatic Discharge Protection Design Method

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors