Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Back-Gate Graphene Field-Effect Transistors with Double Conductance Minima

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Tunable Transport Characteristics of Double-Gated Graphene Field-Effect Transistors Using P(VDF-TrFE) Ferroelectric Gating

Unipolar to Ambipolar Conversion in Graphene Field-Effect Transistors

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

HfO2 Dielectric Thickness Dependence of Electrical Properties in Graphene Field Effect Transistors with Double Conductance Minima

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Optimizing the fabrication process for high performance graphene field effect transistors.

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

Improve the Transconductance of a Graphene Field-Effect Transistor by Folding Graphene into a Wedge

Three-Dimensional Micro-Channel Structure of Graphene Field-Effect Transistor

Computational Study of Graphene-Based Vertical Field Effect Transistor

Graphene-GaAs/AlxGa1−xAs heterostructure dual-function field-effect transistor

Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors

Evolution of Graphene Dirac Fermions in Electric Double‐Layer Transistors with a Soft Barrier (Adv. Funct. Mater. 34/2024)

The Gate Leakage Current in Graphene Field-Effect Transistor

Ultra-low contact resistance in graphene devices at the Dirac point

Graphene-based Field Effect Transistor in Two-Dimensional Paper Networks