Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Tunable Transport Characteristics of Double-Gated Graphene Field-Effect Transistors Using P(VDF-TrFE) Ferroelectric Gating

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Poly (ethylene Imine)-Modulated Transport Behaviors of Graphene Field Effect Transistors with Double Dirac Points

Flexible graphene field effect transistor with ferroelectric polymer gate

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Electrically Configurable Graphene Field-Effect Transistors with a Graded-potential Gate.

Tunable Transport Characteristics of P-Type Graphene Field-Effect Transistors by Poly(ethylene Imine) Overlayer

Single-layer graphene field-effect transistors with ferroelectric PZT gate

Graphene Field Effect Transistors with Ferroelectric Gating

Back-Gate Graphene Field-Effect Transistors with Double Conductance Minima

Quantum Simulation Study of Double Gate Hetero Gate Dielectric and LDD Doping Graphene Nanoribbon P–i–n Tunneling FETs

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Unipolar to Ambipolar Conversion in Graphene Field-Effect Transistors

Nitrogen Plasma-Treated Multilayer Graphene-Based Field Effect Transistor Fabrication and Electronic Characteristics

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

Graphene Field-Effect Transistor Current Source with Double Top-Gates and Double Feedback

Electrical transport in suspended and double gated trilayer graphene

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Quantum Transport in Double-Gated Graphene Devices