Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.

A Study Of The Electrical And Mechanical Reliability Properties Of Suspended Graphene Nems Devices For Esd Protection Applications

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

A Dual-Polarity Graphene NEMS Switch ESD Protection Structure

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Study of graphene field-effect transistors under electrostatic discharge stresses

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Studies of Graphene-Based Nanoelectromechanical Switches

Breakdown Voltage of Ultrathin Dielectric Film Subject to Electrostatic Discharge Stress

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

On the Electrostatic Discharge Robustness of Graphene

Novel Nanophase-Switching ESD Protection

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Characterization Of Single-Crystalline Graphene Esd Interconnects

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

Ggnmos As Esd Protection in Different Nanometer Cmos Process