Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Characterizing Phase Switching Structures for ESD Protection

Novel Nanophase-Switching ESD Protection

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Programmable On-Chip Esd Protection Using Nanocrystal Dots Mechanism And Structures

Dual-Direction Nanocrossbar Array Esd Protection Structures

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

A novel gate-suppression technique for ESD protection.

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Design and analysis of new silicided nano crystal dots field programmable ESD protection structures in BiCMOS

A Wafer-Level Characterization Method of Esd Protection Circuits for Both Component-Level and System-Level Applications

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process