Design and analysis of new silicided nano crystal dots field programmable ESD protection structures in BiCMOS

rui ma,zitao shi,xin wang,hui zhao,li wang,zongyu dong,chen zhang,lin lin,huimei zhou,albert wang,jianlin liu,bin zhao,yuhua cheng
DOI: https://doi.org/10.1109/BCTM.2012.6352627
2012-01-01
Abstract:This paper discusses design and analysis of new nano crystal quantum dot (NC-QD) based field programmable electrostatic discharge (ESD) protection structures. Prototype NC-QD ESD structures were verified experimentally, achieving a wide ESD triggering voltage tuning range of 2.5V, very fast response time of ~100pS, ESD protection level of 25mA/μm in human body model (HBM) and 400mA/μm in charged device model (CDM), and very low leakage current of Ileak~15pA.
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