Characterization Of Single-Crystalline Graphene Esd Interconnects
Qi Chen,Cheng Li,Fei Lu,Chenkun Wang,Feilong Zhang,Tianru Wu,Xiaoming Xie,Kun Zhang,Xinxin Li,Jimmy Ng,Ya-Hong Xie,Yuhua Cheng,Albert Z. Wang
DOI: https://doi.org/10.1109/ASICON.2017.8252641
2017-01-01
Abstract:We report systematic transient characterization of single-crystalline graphene (SCG) interconnects for electrostatic discharge (ESD) protection for integrated circuits (IC). Single-crystalline graphene ribbons were fabricated by CVD method with practical dimensions and characterized by transmission line pulsing (TLP) and very-fast TLP (VFTLP) measurements. Comprehensive TLP and VFTLP testing with varying pulse rise time (t(r)) and duration (t(d)) was performed. Measurement statistics show improvement of ESD protection capability compared with poly-crystalline graphene (PCG) ESD interconnects. Specifically, ESD current handling density (J(t2)) of SCG wires is up to similar to 10(9) A/cm(2), about three times higher than that for PCG ESD interconnects.