Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Nitrogen Plasma-Treated Multilayer Graphene-Based Field Effect Transistor Fabrication and Electronic Characteristics

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

In Situnitrogen-Doped Graphene Grown from Polydimethylsiloxane by Plasma Enhanced Chemical Vapor Deposition

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Tunable Transport Characteristics of Double-Gated Graphene Field-Effect Transistors Using P(VDF-TrFE) Ferroelectric Gating

Optimizing the fabrication process for high performance graphene field effect transistors.

Highly Stable and Tunable N-Type Graphene Field-Effect Transistors with Poly(Vinyl Alcohol) Films

N-doped graphene field-effect transistors with enhanced electron mobility and air-stability.

Highly efficient two-step nitrogen doping of graphene oxide-based materials in oxygen presence atmosphere for high-performance transistors and electrochemical applications

Tunable Electronic Properties of Graphene Through Controlling Bonding Configurations of Doped Nitrogen Atoms

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications

Atomically Well-Defined Nitrogen Doping for Cross-Plane Transport Through Graphene Heterojunctions

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level