Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Highly Stable and Tunable N-Type Graphene Field-Effect Transistors with Poly(Vinyl Alcohol) Films

Controlled Ambipolar-to-unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene Imine)/poly(ethylene Glycol) Films.

N-doped graphene field-effect transistors with enhanced electron mobility and air-stability.

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Air-stable N-Type Doping of Graphene from Overlying Si3N4 Film

Nitrogen Plasma-Treated Multilayer Graphene-Based Field Effect Transistor Fabrication and Electronic Characteristics

Tuning the Dirac Point in CVD-grown Graphene Through Solution Processed N-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1h-benzoimidazole.

Optimizing the fabrication process for high performance graphene field effect transistors.

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Highly Efficient n-Type Doping of Graphene by Vacuum Annealed Amine-Rich Macromolecules

Reversible N-Type Doping of Graphene by H2o-Based Atomic-Layer Deposition and Its Doping Mechanism

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Doping-Induced Tunable Wettability and Adhesion of Graphene

Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties

Enhancement of the Electrical Properties of Graphene Grown by Chemical Vapor Deposition Via Controlling the Effects of Polymer Residue

Tunable Transport Characteristics of P-Type Graphene Field-Effect Transistors by Poly(ethylene Imine) Overlayer

Uniform Doping of Graphene Close to the Dirac Point by Polymer-Assisted Assembly of Molecular Dopants

Tunable Electronic Properties of Graphene Through Controlling Bonding Configurations of Doped Nitrogen Atoms

Versatile P‐type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes

Ambipolar/Unipolar Conversion In Graphene Transistors By Surface Doping