Abstract:Doping as one of the popular methods to manipulate the properties of nanomaterials has received extensive application in deriving different types of graphene derivates, while the understanding of the resonance properties of dopant graphene is still lacking in literature. Based on the large-scale molecular dynamics simulation, reactive empirical bond order potential, as well as the tersoff potential, the resonance properties of N-doped graphene were studied. The studied samples were established according to previous experiments with the N atom’s percentage ranging from 0.38%-2.93%, including three types of N dopant locations, i.e., graphitic N, pyrrolic N and pyridinic N. It is found that different percentages of N-dopant exert different influence to the resonance properties of the graphene, while the amount of N-dopant is not the only factor that determines its impact. For all the considered cases, a relative large percentage of N-dopant (2.65% graphitic N-dopant) is observed to introduce significant influence to the profile of the external energy, and thus lead to an extremely low Q-factor comparing with that of the pristine graphene. The most striking finding is that the natural frequency of the defective graphene with N-dopant’s percentage higher than 0.89% appears larger than its pristine counterpart. For the perfect graphene, the N-dopant shows larger influence to its natural frequency. This study will enrich the current understanding of the influence of dopants on graphene, which will eventually shed lights on the design of different molecules-doped graphene sheet.

Electron-doping of Graphene-Based Devices by Hydrazine

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Adjustable Hydrazine Modulation of Single-Wall Carbon Nanotube Network Field Effect Transistors from P-Type to N-Type

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Hydrogen-dominated metal-free growth of graphitic-nitrogen doped graphene with <i>n</i>-type transport behaviors

Programmable graphene doping via electron beam irradiation

Production of Nitrogen-Doped Graphene by Low-Energy Nitrogen Implantation

N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Tuning the Doping Types in Graphene Sheets by N Monoelement

Synthesis of N-doped graphene film with tunable graphitic and pyridinic doping content

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Tuneable effects of pyrrolic N and pyridinic N on the enhanced field emission properties of nitrogen-doped graphene

Unlocking the chemistry of graphene: the impact of charge carrier concentration on molecular adsorption on graphene

Precisely Controllable N-Type Doping in MoTe2 Field Effect Transistors by Hydrazine Treatment

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid

Tunable Transfer Behaviors of Single-Layer Wse2 Field Effect Transistors by Hydrazine

Toward N-Doped Graphene Via Solvothermal Synthesis

Efficient doping of functionalized graphene and h-BN by molecular adsorption

Highly Stable and Tunable N-Type Graphene Field-Effect Transistors with Poly(Vinyl Alcohol) Films