Abstract:The effect of impurities on the physical properties of materials with an otherwise perfectly crystalline order have intrigued scientist for decades. In this respect, the availability of 2D layered materials such as graphene and the ability to introduce structural imperfections in them through doping has opened up possibilities for studying the consequence of disorder at the atomic level. In this study, we report on investigation of low temperature electrical transport measurements of B and N co-doped graphene layers C(B,N). These systems have a unique combination of impurities including both atomistically separated B and N species, as well as hexagonal boron nitride (h-BN) units within the graphitic C lattice. Despite its graphene-like lattice structure, h-BN is a wide band-gap material (>4.5 eV) due to a breakdown in its sublattice mirror symmetry. Hence, asymmetrically co-doped C(B,N) with n B ≠n N , is a unique combination of impurity doping and alloy formation within a 2D confined geometry. Earlier, the presence of h-BN it has been shown to open up a band gap in the otherwise gap-less graphene. In this work, we present a detailed investigation of the temperature dependence of transport in asymmetrically co-doped C(B,N). We find that the temperature dependence of resistance (5K < T < 400 K) of pure graphene shows a metallic behavior, whereas the C(B,N) samples show an increasingly semiconducting behavior with increasing doping levels. The temperature dependence of these samples could be approximately classified into two regimes. Within the studied range, at higher temperatures, the doped samples showed a band-gap dominated Arrhenius-like temperature dependence. At the lowest temperatures, the temperature dependence deviates from an activated behavior, and presents evidence for a conduction mechanism that is consistent with Mott's 2D-Variable Range Hopping (2D-VRH).

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Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

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Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

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Tuning the Doping Types in Graphene Sheets by N Monoelement

Tuning the Electrical Properties of Large Area Graphene Through Boron-Nitrogen Co-Doping

Electronic Structures and Transport Properties of Armchair Graphene Nanoribbons by Ordered Doping

Graphene Dirac Point Tuned by Ferroelectric Polarization Field

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Tuning the Doping Type and Level of Graphene with Different Gold Configurations

A first-principles study on the electronic transport properties of symmetric B/N co-doped armchair graphene nanoribbons with H/O co-saturation

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

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Highly Stable and Tunable N-Type Graphene Field-Effect Transistors with Poly(Vinyl Alcohol) Films

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts