Abstract:The effects of boron and nitrogen doping on the transport properties of zigzag-edged graphene nanoribbons ZGNRs with antiferromagnetically coupled edge states are investigated by first-principles electronic structure combined with a nonequilibrium Green’s function technique. Specifically, the effects produced by single and multiple impurities as a function of their distance from the edges are analyzed. It is found that the introduction of single B or N atoms induces bound states and quasibound states in ZGNRs, which can be observed as dips or peaks in the electron transmission function. In particular, the transmission channel associated to the edge states is strongly suppressed when the impurities are close to the edges. Multiple impurities in general interfere and modify further the transmission function. However, if the impurities are placed at positions such that the associated bound and quasibound states appear at opposite sides of the Fermi level, then the transmission can be rationalized as a simple superposition of the transmission function of individually doped ribbons. Finally, an interesting situation appears for B and N codoping, since fully spin-polarized transmission peaks are generated at energies corresponding to the ribbon gap. This offers the hope of using such nanoribbons for low-bias spin-polarized tunneling in spintronics applications.

Making A Field Effect Transistor On A Single Graphene Nanoribbon By Selective Doping

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Field-effect transistors based on single graphene oxide nanoribbon from longitude-unzipped carbon nanotubes

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Building Half-Metallicity in Graphene Nanoribbons by Direct Control over Edge States Occupation

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Effects Induced by Single and Multiple Dopants on the Transport Properties in Zigzag-Edged Graphene Nanoribbons

Highly Spin Polarized Transport in Γ-Zigzag Graphyne Nanoribbon Junctions

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Tuning the Electronic and Magnetic Properties in Zigzag Boron Nitride Nanoribbons with Carbon Dopants

Electronic Properties of Graphene Nanoribbon Doped by Boron/Nitrogen Pair: A First-Principles Study

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Converting Metallic Single-Walled Carbon Nanotnbes Into Semiconductors By Boron/Nitrogen Co-Doping

Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

Electronic transport in graphene nanoribbons with sublattice-asymmetric doping