Abstract:Single-walled carbon nanotubes (SWCNTs) offer great potential for field-effect transistors and integrated circuit applications due to their extraordinary electrical properties. To date, as-made SWCNT transistors are usually p-type in air, and it still remains challenging for realizing n-type devices. Herein, we present efficient and reversible electron doping of semiconductor-enriched single-walled carbon nanotubes (s-SWCNTs) by firstly utilizing decamethylcobaltocene (DMC) deposited by a simple spin-coating process at room temperature as an electron donor. A n-type transistor behavior with high on current, large I on /I off ratio and excellent uniformity is obtained by surface charge transfer from the electron donor DMC to acceptor s-SWCNTs, which is further corroborated by the Raman spectra and the ab initio simulation results. The DMC dopant molecules could be reversibly removed by immersion in N, N-Dimethylformamide solvent, indicating its reversibility and providing another way to control the carrier concentration effectively as well as selective removal of surface dopants on demand. Furthermore, the n-type behaviors including threshold voltage, on current, field-effect mobility, contact resistances, etc. are well controllable by adjusting the surface doping concentration. This work paves the way to explore and obtain high-performance n-type nanotubes for future complementary CMOS circuit and system applications.

Converting Metallic Single-Walled Carbon Nanotnbes Into Semiconductors By Boron/Nitrogen Co-Doping

Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Semiconducting Single-Walled Carbon Nanotubes Synthesized by S-Doping

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Nitrogen doping of metallic single-walled carbon nanotubes: n-type conduction and dipole scattering

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Metal-like single crystalline boron nanotubes: synthesis and in situ study on electric transport and field emission properties

Tuning the Electron Transport Properties of Boron-Nitride Nanoribbons with Electron and Hole Doping

Doping Mechanism in Single-Wall Carbon Nanotubes Studied by Optical Absorption

Tuning the Electronic and Magnetic Properties in Zigzag Boron Nitride Nanoribbons with Carbon Dopants

Synthesis, Analysis and Electrical Properties of Silicon Doped BN Nanowires

Mild Bromination-Assisted Density-Gradient Ultracentrifugation to Sort Single-Walled Carbon Nanotubes by Metallicity

Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

Nitrogen‐Doped Single‐Walled Carbon Nanotubes Grown on Substrates: Evidence for Framework Doping and Their Enhanced Properties

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Synthesis of Nitrogen-Doped Single-Walled Carbon Nanotubes and Monitoring of Doping by Raman Spectroscopy

Making A Field Effect Transistor On A Single Graphene Nanoribbon By Selective Doping

Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors