Abstract:Tuning the transport properties of graphene-based devices to achieve better performance is a fascinating but tough challenge. To overcome this challenge, we created one-dimensional nanostructures that resemble chains by symmetrically doping B and N atoms at different positions in armchair graphene nanoribbons (AGNRs) of different widths saturated by H/O atoms. Their transport properties, including band structure, the spatial distribution of eigenstates, the projected density of states (PDOS), and current-voltage (I-V) curve, have been investigated depending on the non-equilibrium Green's function (NEGF) and Density functional theory (DFT) methods. Based on the calculations, the seven-atom-wide armchair graphene nanoribbons (7-AGNRs) have a distinctive negative differential resistance (NDR) effect with a maximum peak-to-valley ratio (PVR) of 3.34 × 10 6 . We speculate that the NDR effect depends on the strength of the coupling between the band structures of the electrodes within the transmission window, and that the degree of overlap between the P z orbitals of the doped atoms and their delocalized big π orbitals is also relevant. Compared to the existing diodes with fully hydrogenated or fluorinated edges, diodes with H/O co-saturated edges have lower start-up voltages and higher currents in the doped case, as well as rectification ratio of up to 4.48 × 10 6 in the range of [1.1 V, 1.4 V]. Our results have great promise for applications in digital and storage devices as well as in novel oscillators and nanoelectronics.

Electronic Properties of Graphene Nanoribbon Doped by Boron/Nitrogen Pair: A First-Principles Study

Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Electronic Properties and Nonlinear Optical Responses of Boron/Nitrogen-Doped Zigzag Graphene Nanoribbons

First-principles Study of Electronic and Optical Properties of Boron and Nitrogen Doped Graphene

Influence of B doping and N doping on structure and electronic properties of graphene

Effects Induced by Single and Multiple Dopants on the Transport Properties in Zigzag-Edged Graphene Nanoribbons

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Electronic Properties of Substitutionally Boron-doped Graphene Nanoribbons on a Au(111) Surface

Electronic Structures and Transport Properties of Armchair Graphene Nanoribbons by Ordered Doping

Electronic and magnetic properties of nitrogen-doped graphene nanoribbons with grain boundary

Electronic Properties of Graphene Nanoribbons Embedded in Boron Nitride Sheets

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms

Electronic Properties Of Graphene Nanoribbons Stacked On Boron Nitride Nanoribbons

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

Electronic and Transport Properties of Boron and Nitrogen passivated Zigzag Graphene Nanoribbons

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study

A first-principles study on the electronic transport properties of symmetric B/N co-doped armchair graphene nanoribbons with H/O co-saturation

Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons

Effects of B and N Doping on Spin Polarized Transport in Graphene Nanoribbons

Tuning the Electron Transport Properties of Boron-Nitride Nanoribbons with Electron and Hole Doping