Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons

Seong Sik Kim,Han Seul Kim,Hyo Seok Kim,Yong-Hoon Kim

DOI: https://doi.org/10.48550/arXiv.1407.2166

2014-07-09

Abstract:We present an ab initio study of the structural, electronic, and quantum transport properties of B-N-complex edge-doped graphene nanoribbons (GNRs). We find that the B-N edge codop-ing is energetically a very favorable process and furthermore can achieve novel doping effects that are absent for the single B or N doping. The compensation effect between B and N is predicted to generally recover the excellent electronic transport properties of pristine GNRs. For the zigzag GNRs, however, the spatially localized B-N defect states selectively destroy the doped-side spin-polarized GNR edge currents at the valence and conduction band edges. We show that the energetically and spatially spin-polarized currents survive even in the fully ferromagnetic metallic state and heterojunction configurations. This suggests a simple yet ef-ficient scheme to achieve effectively smooth GNR edges and graphene-based spintronic de-vices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to restore the excellent charge - transport properties of graphene nanoribbons (GNRs) through boron - nitrogen complex doping (B - N - complex doping) and to achieve a new type of spin - polarized current. Specifically, the article mainly focuses on the following aspects:

1. **Restoring charge - transport properties**:
- Research shows that doping with a single boron or nitrogen atom will significantly reduce the charge - transport properties of GNRs, while B - N complex doping can almost completely restore the transport characteristics of the original GNRs.
- This restoration effect is due to the compensation between B and N atoms, which enables the doped GNRs to restore their original charge - transport ability while maintaining structural stability.

2. **Achieving spin - polarized current**:
- For zigzag GNRs (zGNRs), B - N complex doping can selectively destroy the spin - polarized current on the doped side at the valence - band and conduction - band edges, but at the same time retain the energy and spatial spin - polarized current on the undoped side.
- Even in the fully ferromagnetic - metal state, these spin - polarized currents still exist, which provides a simple and effective scheme for GNRs - based spintronic devices.

3. **Exploring new doping methods**:
- Although traditional single - boron or - nitrogen doping can introduce defect states, it will lead to a decline in transport properties. However, B - N complex doping is not only more energetically favorable but can also avoid these problems.
- The paper uses density - functional theory (DFT) and non - equilibrium Green's function (NEGF) calculations to study in detail the influence of this new doping method on the structure, electronic, and transport properties of GNRs.

4. **Potential for practical applications**:
- The proposed B - N complex doping method can help in the preparation of high - quality GNRs and is helpful for designing graphene - based spintronic devices.
- Especially in the fields of nanoelectronics and spintronics, this method has important potential application value.

In summary, this paper aims to solve the problem of the decline in charge - transport properties of GNRs in practical applications through B - N complex doping and to explore new ways to achieve highly efficient spin - polarized currents.