Abstract:Graphene nanoribbons have attracted attention for their novel electronic and spin transport properties1-6, and because nanoribbons less than 10 nm wide have a band gap that can be used to make field effect transistors. However, producing nanoribbons of very high quality, or in high volumes, remains a challenge. Here, we show that pristine few-layer nanoribbons can be produced by unzipping mildly gas-phase oxidized multiwalled carbon nanotube using mechanical sonication in an organic solvent. The nanoribbons exhibit very high quality, with smooth edges (as seen by high-resolution transmission electron microscopy), low ratios of disorder to graphitic Raman bands, and the highest electrical conductance and mobility reported to date (up to 5e2/h and 1500 cm2/Vs for ribbons 10-20 nm in width). Further, at low temperature, the nanoribbons exhibit phase coherent transport and Fabry-Perot interference, suggesting minimal defects and edge roughness. The yield of nanoribbons was ~2% of the starting raw nanotube soot material, which was significantly higher than previous methods capable of producing high quality narrow nanoribbons1. The relatively high yield synthesis of pristine graphene nanoribbons will make these materials easily accessible for a wide range of fundamental and practical applications.

Field-effect transistors based on single graphene oxide nanoribbon from longitude-unzipped carbon nanotubes

Narrow Graphene Nanoribbons from Carbon Nanotubes

Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Graphene Nanoribbon Devices Produced by Oxidative Unzipping of Carbon Nanotubes

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

Making A Field Effect Transistor On A Single Graphene Nanoribbon By Selective Doping

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Large-Scale Production Of Graphene Nanoribbons From Electrospun Polymers

Field Effect Transistors Based on in Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor: Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

Electronic, Magnetic and Transport Properties of Graphene Ribbons Terminated by Nanotubes

Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes

Facile Synthesis of High Quality Graphene Nanoribbons

High-Kappa Oxide Nanoribbons As Gate Dielectrics For High Mobility Top-Gated Graphene Transistors

Carbon nanotube transistors with graphene oxide films as gate dielectrics

Room-Temperature All-Semiconducting Sub-10-Nm Graphene Nanoribbon Field-Effect Transistors

Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons