Abstract:The physical properties of 2D materials can be tuned by doping to extreme charge carrier density, enabling the investigation of phenomena such as superconductivity, charge density waves, band inversion and Lifshitz transitions. For example, it is variably estimated that an electron density of 3.7 − 5.1 × 10 14 cm −2 is required in order to induce a Lifshitz transition in monolayer graphene [1,2]. At this charge density, the Fermi surface passes through the hyperbolic saddle point of graphene at the M-pointin the Brillouin zone, where the Fermi surface geometry changes and the density of states diverges at a van Hove singularity. Achieving charge density sufficient to reach the Lifshitz transition has been limited to chemical doping in ultra-high vacuum (UHV) conditions and observation by angle resolved photoemission spectroscopy (ARPES). Integrating experimental methods for charge transport measurements with UHV chemical doping conditions is typically difficult. Field-effect methods including dielectric gating and ionic liquid gating are readily integrated with charge transport measurements, but achieve lower charge carrier density than UHV chemical doping methods. We report here an integrated flip-chip method to dope graphene by alkali vapour in the diffusive regime, suitable for charge transport measurements at ultra-high charge carrier density. We introduce a liquid cesium droplet source into a sealed cavity filled with inert gas (argon) to dope a monolayer graphene Hall bar on a quartz substrate by the process of cesium atom diffusion, adsorption and ionization at the graphene surface (Fig. a). Doping can be monitored by operando ac Hall measurement of longitudinal R xx and transverse R xy resistance of graphene (Fig. b). An optical image of a representative graphene Hall bar is shown in Fig. c (scale bar = 100 μm). The measured time dependent R xx and R xy during Cs exposure can be used to determine the time dependent electron density n and electron mobility μ . Upon sealing, the flip-chip assembly containing doped graphene is stable in ambient conditions, enabling sample characterization by various means, including non-resonant Raman scattering measurement through the transparent quartz window. Charge transport versus temperature and magnetic field in a variable temperature insert was performed, including Hall measurements to B = 7 T (Fig. d). By these methods, we confirm that flip-chip doping with Cs can be used to achieve charge density exceeding 4 × 10 14 cm −2 . The Lifshitz transition is observed via the inversion of cyclotron effective mass, corresponding to sign inversion of the Hall coefficient R H (Fig. d). Employing a third-nearest-neighbour tight binding (3NNTB) calculation, we estimate the Fermi energies and Fermi surfaces corresponding to the charge densities observed by high field magnetotransport (Fig. e). At the Lifshitz transition, the Fermi surface transforms abruptly from that of electron pockets around the K and K' points, to a hole pocket around Γ. Further experimental observations will be discussed. In summary, our findings show that chemical doping, hitherto restricted to ultra-high vacuum conditions, can be applied in a diffusive regime at ambient pressure in an inert gas environment. We anticipate that our flip-chip doping method can be applied to a variety of 2D materials and dopant speciies beyond monolayer graphene and Cs. [1] P. Rosenzweig et al., "Overdoping graphene beyond the van Hove singularity", Physical Review Letters 125, 176403 (2020). [2] A. Zaarour et al., "Flat band and Lifshitz transition in long-range-ordered supergraphene obtained by Erbium intercalation. Physical Review Research 5, 013099 (2023). Figure 1

Controlled doping of graphene by impurity charge compensation via a polarized ferroelectric polymer

Controlled Ambipolar-to-unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene Imine)/poly(ethylene Glycol) Films.

Programmable graphene doping via electron beam irradiation

Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures

Controlling doping in graphene through a SiC substrate: A first-principles study

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Metal To Insulator Transition In Epitaxial Graphene Induced By Molecular Doping

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid

Graphene Dirac Point Tuned by Ferroelectric Polarization Field

Overcoming Doping Difficulty in Graphene Via Substrate

Unlocking the chemistry of graphene: the impact of charge carrier concentration on molecular adsorption on graphene

First-principles study of multi-control graphene doping using light-switching molecules

Doping and Band Gap Control at Poly(vinylidene Fluoride)/graphene Interface

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Impurity induced spin gap asymmetry in nanoscale graphene

Photoinduced Doping in Heterostructures of Graphene and Boron Nitride

(Invited) High-Density, Flip-Chip Alkali Doping of Graphene and Observation of the Lifshitz Transition

Atomic Hole Doping of Graphene

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level