Abstract:The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for post-silicon applications such as switching, photonics, and flexible electronics. Since these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. Here we employed scanning tunneling microscopy (STM) and spectroscopy (STS) with gating capabilities to measure the bandgap and the position of EF in MoS2, and to track its evolution with gate voltage. For bulk samples, the measured bandgap (~1.3eV) is comparable to the value obtained by photoluminescence, and the position of EF (~0.35eV) below the conduction band, is consistent with n-doping reported in this material. Using topography together with spectroscopy we traced the source of the n-doping in bulk MoS2 samples to point defects, which we attribute to S vacancies. In contrast, for thin films deposited on SiO2, we found significantly higher levels of n-doping that cannot be attributed to S vacancies. By combining gated STS with transport measurements in a field effect transistor (FET) configuration, we demonstrate that the higher levels of n-doping in thin film samples is due to charge traps at the sample-substrate interface.

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

The current hysteresis effect of tower-like MoS2 nanocrystalline film for field emission and memristor applications

Scaling Behavior Of Hysteresis In Multilayer Mos2 Field Effect Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$

Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on Sio2 Substrates Using Raman Spectroscopy

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Gas dependent hysteresis in MoS$_2$ field effect transistors

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors