Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Scaling Behavior Of Hysteresis In Multilayer Mos2 Field Effect Transistors

Gas dependent hysteresis in MoS$_2$ field effect transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices

Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS 2 FET

Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET

Hysteresis-free MoS2 Metal Semiconductor Field-Effect Transistors with Van Der Waals Schottky Junction

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

The current hysteresis effect of tower-like MoS2 nanocrystalline film for field emission and memristor applications

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Hysteresis Reversion in Graphene Field-Effect Transistors

Hysteresis-reversible MoS2 Transistor

Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Analysis of Current Hysteresis in Graphene Field Effect Transistor

Hysteresis-reversible MoS 2 transistor