Abstract:In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibit out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields.

The current hysteresis effect of tower-like MoS2 nanocrystalline film for field emission and memristor applications

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Scaling Behavior Of Hysteresis In Multilayer Mos2 Field Effect Transistors

Gas dependent hysteresis in MoS$_2$ field effect transistors

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

Current-voltage Hysteresis of the Composite MoS2-MoO≤3 Nanobelts for Data Storage

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Electrical Hysteresis of Single-Walled Carbon Nanotube Field Effect Transistors and Its Modulation by an External Magnetic Field

Memcapacitors and Memristor Characteristics of ISGE-SOT and SHE-SOT Gain-Driven MoS2:Er Ferromagnets

Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors

Memristive model of hysteretic field emission from carbon nanotube arrays

Hysteresis-free Behavior of MoS2 Negative Capacitance Transistor by Using Low-Temperature Grown HfO2 As Encapsulation Layer

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

Effect of Nanostructure Building Formation on High Current Field Emission Properties in Individual Molybdenum Nanocones