Abstract:One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the hysteresis in their transfer characteristics, which is typically associated with charge trapping (CT) and charge detrapping (CDT) induced by atomic defects at the MoS2-dielectric interface. Here, we propose a novel atomistic framework to simulate electronic processes across the MoS2-SiO2 interface, demonstrating the distinct CT/CDT behavior of different types of atomic defects and further revealing the defect type(s) that most likely cause hysteresis. An anharmonic approximation of the classical Marcus theory is developed and combined with state-of-the-art density functional theory to calculate the gate bias-dependent CT/CDT rates. All the key electronic quantities are calculated with Heyd-Scuseria-Ernzerhof hybrid functionals. The results show that single Si-dangling bond defects are active electron trapping centers. Single O-dangling bond defects are active hole trapping centers, which are more likely to be responsible for the hysteresis phenomenon due to their significant CT rate and apparent threshold voltage shift. In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS2 FETs and provide vital support for understanding and solving the reliability of nanoscale devices.

Hysteresis-reversible MoS 2 transistor

Hysteresis-reversible MoS2 Transistor

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Hysteresis-free MoS2 Metal Semiconductor Field-Effect Transistors with Van Der Waals Schottky Junction

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

Gas dependent hysteresis in MoS$_2$ field effect transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Stable Hysteresis-Free MoS 2 Transistors with Low-k/High-k Bilayer Gate Dielectrics

Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Domain Wall Enabled Steep Slope Switching in MoS2 Transistors Towards Hysteresis-Free Operation

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

Surface Charge Transfer Doping Enabled Large Hysteresis in van der Waals Heterostructures for Artificial Synapse