Abstract:The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply voltage and the overall power consumption [1]. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier [2]. Meanwhile, two-dimensional (2D) semiconductors, such as atomically thin transition metal dichalcogenides (TMDs) due to their low dielectric constant, and ease of integration in a junctionless transistor topology, offer enhanced electrostatic control of the channel. Here, we combine these two advantages and demonstrate for the first time a molybdenum disulfide (MOS 2 )2D steep slope transistor with a ferroelectric hafnium zirconium oxide layer (HZO) in the gate dielectric stack [3]. This device exhibits excellent performance in both on- and off-states, with maximum drain current of 510 μA/μm, sub-thermionic subthreshold slope and is essentially hysteresis-free. Negative differential resistance (NDR) was observed at room temperature in the MoS 2 negative capacitance field-effect-transistors (NC-FETs) as the result of negative capacitance due to the negative drain-induced-barrier-lowering (DIBL). High on-current induced self-heating effect was also observed and studied. We will also discuss the effect of internal metal gate [4], [5], p-type 2D transistors [6], and ferroelectric switch speed issues [7] in this talk. The work is in close collaborations with Mengwei Si, Wonil Chung, Chun-Jung Su, Chunsheng Jiang, Hong Zhou, Kerry D. Maize, Ali Shakouri, Muhammad A. Alam.

Stable Hysteresis-Free MoS 2 Transistors with Low-k/High-k Bilayer Gate Dielectrics

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Hysteresis-free MoS2 Metal Semiconductor Field-Effect Transistors with Van Der Waals Schottky Junction

Hysteresis-Free Solution-Processed 2-D MoS2 Flake-Thin-Film Transistors with Improved Operational Stability

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Domain Wall Enabled Steep Slope Switching in MoS2 Transistors Towards Hysteresis-Free Operation

Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors

Domain Wall Enabled Steep Slope Switching in MoS$_2$ Transistors Towards Hysteresis-Free Operation

MoS(2 )transistor Gated by PMMA-based Electrolyte for Sub-1 V Operation

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Steep-Slope and Hysteresis-Free MoS2 Negative-Capacitance Transistors Using Single HfZrAlO Layer As Gate Dielectric.

Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors

Dramatic Switching Behavior in Suspended MoS2 Field-Effect Transistors

TMD material investigation for a low hysteresis vdW NCFET logic transistor

Impact of the Channel Length on Molybdenum Disulfide Field Effect Transistors with Hafnia-Based High-K Dielectric Gate

Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems