Abstract:Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H–1T′ phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H–1T′ phase transition, which imposes a 3% directional elongation of the topological 1T′ phase with respect to the semiconducting 2H. We note that only a few percent 2H–1T′ phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c05721?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c05721</a>.Additional measurements on the memristive effect and PPC with some models, a description of the movement equation of the resonator, and a more complete discussion on the origin of the observed mechanical softening (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c05721/suppl_file/nn0c05721_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors

Impact of Trap Profile on the Characteristics of 2-D MoS 2 Memtransistors: A Simulation Study

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Phase Transition in a Memristive Suspended MoS 2 Monolayer Probed by Opto- and Electro-Mechanics

Metal Penetration and Grain Boundary in MoS2 Memristors

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Direct Observation of the Hysteretic Fermi Level Modulation in Monolayer MoS2 Field Effect Transistors

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Magnetic Field‐Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Hopping Transport Through Defect-Induced Localized States in Molybdenum Disulphide

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$