Abstract:The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

Progress in Research and Development of Metal Nanocrystal Memories

Advances in Nanocrystal Nonvolatile Memory

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Progress in Development of Single-Electron Memory Based on Nano-Crystalline Silicon

Metal Nanogap Memory: Performances and Switching Mechanism

Cr Metal Thin Film Memory

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Overview of Researches on the Nondestructive Testing Method of Metal Magnetic Memory: Status and Challenges

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Metal nanodot memory by self-assembled block copolymer lift-off.

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Non-volatile Memory Based on Atomic Crystals

Memory Materials and Devices: from Concept to Application

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Development of Materials and Devices for Cation-Migration-based Resistive Random Access Memory

Research Progress of Metal Magnetic Memory Testing Technique in Ferromagnetic Components

Recent developments and the future perspectives in magnetoelectric nanocomposites for memory applications

Purely electronic nanometallic ReRAM