Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Development of Materials and Devices for Cation-Migration-based Resistive Random Access Memory

Progress of Cation-Based Resistive Random Access Memory

Recent Progress in Resistive Random Access Memories: Materials, Switching Mechanisms, and Performance

An Overview of Resistive Random Access Memory Devices

An Overview of Materials Issues in Resistive Random Access Memory

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

The storage mechanism of resisitive random access

Resistive Random Access Memory for Future Information Processing System.

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Review of Nonvolatile Memory Based on the Resistance Switching Effect

Resistive Switching Mechanisms for Nonvolatile Resistive Random Access Memory Based on I-V Characteristic

Progress in Development of Resistive RAM and Its Integration Technology

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Materials, Processes, Devices and Applications of Magnetoresistive Random Access Memory

Recent advances in inorganic oxides-based resistive random-access memory devices

Memory Materials and Devices: from Concept to Application

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Conductance Quantization in Resistive Random Access Memory.