Abstract:In this article, we have reported the deposition of Ag nanoparticles assisted HfO 2 thin film-based device with an Au electrode using GLAD-assisted conventional electron beam evaporation technique for memcapacitive applications. The structural, morphology, and chemical compositions were investigated using XRD, FESEM, AFM, and XPS characteristics. The XPS analysis confirmed the presence of oxygen vacancy. The C-V hysteresis loop of the device at various sweeping voltages from ± 1 V to ± 4 V indicated the mechanism of trapping charges. The memory window of the device increased from 0.82 V to 2.21 V as well as the trapped charge density ( N ) increased from 6.81 × 10 9 /cm 2 to 18.35 × 10 9 /cm 2 with sweeping voltages increases from ± 1 V to ± 4 V. The C-V and G-V characteristic for different frequencies of 500 KHz to 1 MHz was conducted to investigate the charge-trapping nature of the device with a low interface trapped density ( D it) value of 8.82 × 10 11 eV -1 / cm 2 at 1 MHz. In addition, the deposited device exhibited forming-free abnormal bipolar resistive switching behavior with a charge conduction mechanism ascribed to hopping conduction and a strong space charge limited current (SCLC). Also, the device displayed a stable endurance of 2000 cycles, a resistance window of ~252, and an excellent data retention of >10 4 s. These impressive results made the Ag nanoparticles-assisted HfO 2 thin film a promising device for applications in advanced memcapacitive non-volatile memory technologies for the next generation.

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Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

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Investigation on Memory Effect of Mos Capacitors with Al-2 O-3/Pt-Nanocrystals/Hfo2

Monolayer FePt Nanocrystal Self-Assembly Embedded into Atomic-Layer-deposited Al2O3 Films for Nonvolatile Memory Applications

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Comparison of Discrete-Storage Nonvolatile Memories: Advantage of Hybrid Method for Fabrication of Au Nanocrystal Nonvolatile Memory

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

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Improved performance for Ag nanoparticles-assisted HfO 2 thin film-based memcapacitive device.

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Modulation on Interfacial States for the Improved Charge Storage Performance in HfO2 Matrix Embedded CoO Nanoparticles-Based Memory Capacitors

Pd Nanocrystals-Embedded TiO<sub>2</sub> Film Sandwiched Between Al<sub>2</sub>O<sub>3</sub> Layers for Nonvolatile Memory Applications

Capacitance Characteristics of Metal-Oxide-semiconductor Capacitors with a Single Layer of Embedded Nickel Nanoparticles for the Application of Nonvolatile Memory

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Nonvolatile Memory Capacitors Based on Al2O3 Tunneling and HfO2 Blocking Layers with Charge Storage in Atomic-Layer-deposited Pt Nanocrystals