Abstract:In this article, we have reported the deposition of Ag nanoparticles assisted HfO 2 thin film-based device with an Au electrode using GLAD-assisted conventional electron beam evaporation technique for memcapacitive applications. The structural, morphology, and chemical compositions were investigated using XRD, FESEM, AFM, and XPS characteristics. The XPS analysis confirmed the presence of oxygen vacancy. The C-V hysteresis loop of the device at various sweeping voltages from ± 1 V to ± 4 V indicated the mechanism of trapping charges. The memory window of the device increased from 0.82 V to 2.21 V as well as the trapped charge density ( N ) increased from 6.81 × 10 9 /cm 2 to 18.35 × 10 9 /cm 2 with sweeping voltages increases from ± 1 V to ± 4 V. The C-V and G-V characteristic for different frequencies of 500 KHz to 1 MHz was conducted to investigate the charge-trapping nature of the device with a low interface trapped density ( D it) value of 8.82 × 10 11 eV -1 / cm 2 at 1 MHz. In addition, the deposited device exhibited forming-free abnormal bipolar resistive switching behavior with a charge conduction mechanism ascribed to hopping conduction and a strong space charge limited current (SCLC). Also, the device displayed a stable endurance of 2000 cycles, a resistance window of ~252, and an excellent data retention of >10 4 s. These impressive results made the Ag nanoparticles-assisted HfO 2 thin film a promising device for applications in advanced memcapacitive non-volatile memory technologies for the next generation.

Improved performance for Ag nanoparticles-assisted HfO 2 thin film-based memcapacitive device.

Glancing angle fabricated Au/ZrO2 nanoparticles based device for non‐volatile capacitive memory application

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO 2 Dielectric

Investigation on Memory Effect of Mos Capacitors with Al-2 O-3/Pt-Nanocrystals/Hfo2

Modulation on Interfacial States for the Improved Charge Storage Performance in HfO2 Matrix Embedded CoO Nanoparticles-Based Memory Capacitors

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition

Low-cost Fabrication and Polar-Dependent Switching Uniformity of Memory Devices Using Alumina Interfacial Layer and Ag Nanoparticle Monolayer

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3 Multilayer and Hafnium Nitride Gate

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

The Effect of Thermal Treatment Induced Inter-Diffusion at the Interfaces on the Charge Trapping Performance of Hfo2/Al2o3 Nanolaminate-Based Memory Devices

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics