Abstract:A careful investigation is made of the growth of Ir nanocrystals (NCs) on Al2O3 by atomic layer deposition (ALD), and a charge trapping memory device using ALD-grown Ir NCs as the charge trapping layer and ALD-grown Al2O3/HfO2 as the tunneling/blocking layers is fabricated. It is found that the ex situ nucleation of Ir NCs on ALD-grown Al2O3 is difficult, though in situ growth can produce pure metallic Ir NCs with a face-centered cubic crystalline phase directly on ALD-grown Al2O3 at the initial growth stage, which follows the nucleation incubation model. The growth of these metallic Ir NCs is attributed to the presence of a uniform coverage of reactive groups (hydroxyl or dimethylaluminum) on the as-deposited fresh ALD-grown Al2O3 surface, which greatly promotes the uniform nucleation of Ir. Electrical measurements of p-Si/Al2O3/Ir NCs/HfO2 memory cells exhibit a large memory window of 4.2 V at the sweeping gate voltage of ±10 V, and a ∼76% retention property after 104 s at 75 °C. Also, a stable memory window of ∼2 V is achieved during the first 105 program/erase cycles under a ±10 V/10 ms program/erase operation. In situ ALD-grown Ir NCs with the highest density of 0.6 × 1012/cm2 provide a potential approach to fabricate large-area high-density NCs for future ultrahigh-density nonvolatile NC memory applications.

Nonvolatile Memory Capacitors Based on Al2O3 Tunneling and HfO2 Blocking Layers with Charge Storage in Atomic-Layer-deposited Pt Nanocrystals

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Monolayer FePt Nanocrystal Self-Assembly Embedded into Atomic-Layer-deposited Al2O3 Films for Nonvolatile Memory Applications

Memory Characteristics and Tunneling Mechanism of Ag Nanocrystal Embedded HfAlOx Films on Si83Ge17/Si Substrate

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Investigation on Memory Effect of Mos Capacitors with Al-2 O-3/Pt-Nanocrystals/Hfo2

Charge Storage Characteristics of Au Nanocrystal Memory Improved by the Oxygen Vacancy-Reduced HfO2 Blocking Layer

Charge Storage and Tunneling Mechanism of Ni Nanocrystals Embedded Hfox Film

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Growth of High-Density Ir Nanocrystals by Atomic Layer Deposition for Nonvolatile Nanocrystal Memory Applications

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2o3/Hfo2/Al2o3 Tunnel Barrier

Pd Nanocrystals-Embedded TiO<sub>2</sub> Film Sandwiched Between Al<sub>2</sub>O<sub>3</sub> Layers for Nonvolatile Memory Applications

Formation of High Density TiN Nanocrystals and Its Application in Non-Volatile Memories

Atomic Layer Deposition of High-Density Pt Nanodots on Al2O3 Film Using (mecp)pt(me)3 and O2 Precursors for Nonvolatile Memory Applications.

Low Voltage Program-Erasable Pd-Al2o3-Si Capacitors with Ru Nanocrystals for Nonvolatile Memory Application

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Charge-Trapping Characteristics of Ga2o3 Nanocrystals for Nonvolatile Memory Applications

The Distinguished Charge-Trapping Capability of the Memory Device with Al 2 O 3 -Cu 2 O Composite As the Charge Storage Layer