Charge Storage and Tunneling Mechanism of Ni Nanocrystals Embedded Hfox Film

H. X. Zhu,T. Zhang,R. X. Wang,Y. Y. Zhang,L. T. Li,X. Y. Qiu
DOI: https://doi.org/10.1063/1.4948751
IF: 1.697
2016-01-01
AIP Advances
Abstract:A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.
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