Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al2O3 gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO2 films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al2O3/TaN, TaN/Al2O3/Si, and TaN/Al2O3/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al2O3/Ge capacitor achieves over 1010 cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al2O3 insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.

Memory Behavior of an Al 2 O 3 Gate Dielectric Non-Volatile Field-Effect Transistor

Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor

Non-Volatile FETs with Amorphous (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, ZrO<sub>2</sub>, etc.) Gate Insulators

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Electrically Programmable-Erasable In-Ga-Zn-O Thin-Film Transistor Memory with Atomic-Layer-Deposited Al2o3/Pt Nanocrystals/Al2o3 Gate Stack

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode