Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers
Jiaxian Wan,Xue Chen,Liwei Ji,Zexin Tu,Hao Wu,Chang Liu
DOI: https://doi.org/10.1109/ted.2022.3146098
IF: 3.1
2022-04-01
IEEE Transactions on Electron Devices
Abstract:Ferroelectricity of Hf0.5Zr0.5O2 thin films prepared by plasma-enhanced atomic layer deposition (PEALD) with and without TiN electrodes was demonstrated. Excellent ferroelectricity of Hf0.5Zr0.5O2 thin films was confirmed by both polarization versus voltage (${P}$ ,–${V}$ ) and piezoresponse force microscopy (PFM) hysteresis loops. The $2{P}_{r}$ value can reach as high as $53 ~mu ext{C}$ /cm2 under a sweep voltage of 8 V with TiN top and bottom electrodes. By introducing Al2O3 capping layer (AOCL), the $2{P}_{r}$ value of the sample can reach $47 mu ext{C}$ /cm2 that is less sensitive to the annealing temperatures and electrode materials. At the same time, the leakage current is also significantly reduced. The typical ${P}$ ,–${V}$ loops can always be observed for samples with different electrode materials or annealing temperatures. These results are beneficial to practical applications in nonvolatile memories and synaptic devices.
engineering, electrical & electronic,physics, applied