PZT Based MFS Structure for FeFET

TQ Shao,TL Ren,CG Wei,XN Wang,CX Li,JS Liu,LT Liu,J Zhu,ZJ Li

DOI: https://doi.org/10.1080/10584580390259759

2003-01-01

Integrated Ferroelectrics

Abstract:Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for Metal-Ferroelectric-Semiconductor FET (MFSFET) devices. PZT based MFS capacitors using lead titanate (PT) as seeding layers have been respectively prepared on p-type <111> and n-type <100> silicon wafers directly by a sol-gel method. PZT/PT films are final annealed at 650degreesC for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors are about 1.8 V and 5 V under the polarization voltages of +/-5 V and +/-10 V correspondingly. The MFS structure can be valuable for MFSFET applications.