Fabrication of Silicon-Based PZT Films and Process-Induced Damage Problems

魏朝刚,任天令,邵天奇,王小宁,李春晓,刘理天,朱钧

DOI: https://doi.org/10.3321/j.issn:1000-0054.2003.04.031

2003-01-01

Abstract:Lead zirconate titanate (PZT) ferroelectric film using lead titanate (PT) as the seeding layers was prepared on a silicon wafer using the sol gel method. The film was then etched using reactive ion etching to form an MFM (metal ferroelectric metal) structure capacitor for FeRAM applications. The ferroelectric capacitor has a high dielectric constant of about 1 000, an ultra low leakage current density of 0.1 nA/cm 2, a remnant polarization of 16 μC/cm 2, and a coercive field of about 30 kV/cm, and is almost fatigue free. Some process induced damage, such as etching induced damage, hydrogen induced degradation, and stresses, which cause degradation of the PZT film have been investigated.